TSM12N02_07资料

Features ● Advance Trench Process Technology

● High Density Cell Design for Ultra Low On-resistance

TSM12N02

20V N-Channel MOSFET

TO-252

Pin Definition: 1. Gate 2. Drain 3. Source

PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)

20

30 @ VGS = 10V 40 @ VGS = 4.5V

ID (A)

8 6

Block Diagram

Application ● Load Switch

● PA Switch

Ordering Information

Part No.

TSM12N02CP RO

Package

TO-252

Packing

T&R

Symbol

VDS VGS ID IDM

a,b

Parameter

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V

Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature

Operating Junction and Storage Temperature Range

Ta = 25C Ta = 70C

o o

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)

Limit

20 ±12 12 30 1.7

Unit

V V A A A W

oo

IS PD TJ TJ, TSTG

60 23

+150 -55 to +150

C C

Thermal Performance

Parameter

Lead Temperature (1/8” from case) Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted) Notes:

a. Maximum DC current limited by the package

b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec.

Symbol TL

RӨJC RӨJA

Limit 10

2.2 50

Unit S

oo

C/W C/W

1/6 Version: A07

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Electrical Specifications

Parameter

Static

Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage

Zero Gate Voltage Drain Current On-State Drain Current

Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance

Reverse Transfer Capacitance Switching

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time

VDD = 10V, ID = 1A, VGEN = 10V, RG = 16Ω

td(on) tr td(off)

-- -- -- --

cb

TSM12N02

20V N-Channel MOSFET

Conditions

VGS = 0V, ID = 250uA VDS = VGS, ID = 250uA VGS = ±12V, VDS = 0V VDS = 20V, VGS = 0V VDS ≥5V, VGS = 10V VGS = 4.5V, ID = 6A VGS = 10V, ID = 8A VDS = 10V, ID = 6A IS = 1.7A, VGS = 0V

Symbol

BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss

Min

20 0.6 -- -- 12 -- -- 7 -- -- -- -- -- -- --

Typ

-- -- -- -- -- 30 21 13 -- 4.86 0.92 1.4 562 106 75 8.1 9.95 21.85 5.35

Max

-- -- ±100 1.0 -- 40 30 -- 1.2 -- -- -- -- -- -- -- -- -- --

Unit

V V nA uA A mΩ S V nC

VDS = 10V, ID = 6A, VGS = 4.5V VDS = 8V, VGS = 0V, f = 1.0MHz

pF

nS

Turn-Off Fall Time tf Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

2/6 Version: A07

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Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted)

TSM12N02

20V N-Channel MOSFET

Output Characteristics

On-Resistance vs. Drain Current

On-Resistance vs. Junction Temperature

3/6 Transfer Characteristics

Gate Charge

Source-Drain Diode Forward Voltage

Version: A07

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Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted)

On-Resistance vs. Gate-Source Voltage

TSM12N02

20V N-Channel MOSFET

Threshold Voltage

Single Pulse Power

Normalized Thermal Transient Impedance, Junction-to-Ambient

4/6 Version: A07

元器件交易网www.cecb2b.com

TSM12N02

20V N-Channel MOSFET

SOT-252 Mechanical Drawing

TO-252 DIMENSION

DIM A A1 B C D E F G G1 G2 H I J K L M

MILLIMETERS MIN

MAX

2.3BSC 4.6BSC 6.80 5.40 6.40 2.20 0.00 5.20 0.75 0.55 0.35 0.90 2.20 0.50 0.90 1.30

7.20 5.60 6.65 2.40 0.20 5.40 0.85 0.65 0.65 1.50 2.80 1.10 1.50 1.70

INCHES MIN

MAX

0.09BSC 0.18BSC 0.268 0.213 0.252 0.087 0.000 0.205 0.030 0.022 0.014 0.035 0.087 0.020 0.035 0.051

0.283 0.220 0.262 0.094 0.008 0.213 0.033 0.026 0.026 0.059 0.110 0.043 0.059 0.67

5/6 Version: A07

元器件交易网www.cecb2b.com

TSM12N02

20V N-Channel MOSFET

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.

6/6 Version: A07