Method for Forming Insulation Film

专利名称：Method for Forming Insulation Film发明人：Takuya Sugawara,Yoshihide Tada,Genji

Nakamura,Shigenori Ozaki,ToshioNakanishi,Masaru Sasaki,Seiji Matsuyama

申请号：US12647902申请日：20091228

公开号：US20100096707A1公开日：20100422

专利附图：

摘要：In a process involving the formation of an insulating film on a substrate for anelectronic device, the insulating film is formed on the substrate surface by carrying out

two or more steps for regulating the characteristic of the insulating film involved in theprocess under the same operation principle. The formation of an insulating film having ahigh level of cleanness can be realized by carrying out treatment such as cleaning,oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air.Further, carrying out various steps regarding the formation of an insulating film underthe same operation principle can realize simplification of the form of an apparatus andcan form an insulating film having excellent property with a high efficiency.

申请人：Takuya Sugawara,Yoshihide Tada,Genji Nakamura,Shigenori Ozaki,ToshioNakanishi,Masaru Sasaki,Seiji Matsuyama

地址：Nirasaki-shi JP,Nirasaki-shi JP,Nirasaki-shi JP,Amagasaki-shi JP,Amagasaki-shiJP,Amagasaki-shi JP,Amagasaki-shi JP

国籍：JP,JP,JP,JP,JP,JP,JP

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