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专利名称：INTEGRATED CIRCUITS
发明人：VILLAVELEZ, Reynaldo V,GE, Ning,YAOW,
Mun Hooi,NESS, Erik D,,NOVAK, David B
申请号：EP14890985.6申请日：20140430公开号：EP3138121A4公开日：20180314
摘要：The present subject matter relates to an integrated circuit. The integratedcircuit includes a first metal layer and a second metal layer capacitively coupled to thefirst metal layer through a dielectric layer. Further, the second metal layer includes anelectron leakage path to provide for leakage of charge from the second metal layer in apredetermined leak time period.
申请人：Hewlett-Packard Development Company, L.P.
地址：11445 Compaq Center Drive W. Houston, Texas 77070 US
国籍：US
代理机构：Haseltine Lake LLP
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