Methods, systems, and apparatus for uniform chemic

专利名称：Methods, systems, and apparatus for

uniform chemical-vapor depositions

发明人：Kie Y. Ahn申请号：US09797324申请日：20010301

公开号：US20020122885A1公开日：20020905

专利附图：

摘要：Integrated circuits, the key components in thousands of electronic and

computer products, are generally built layer by layer on a silicon substrate. One commontechnique for forming layers is called chemical-vapor deposition (CVD.) Conventional CVD

systems not only form layers that have non-uniform thickness, but also have largechambers that make the CVD process wasteful and slow. Accordingly, the inventordevised new CVD systems, methods, and apparatuses. One exemplary CVD systemincludes an outer chamber, a substrate holder, and a unique gas-distribution fixture. Thefixture includes a gas-distribution surface having holes for dispensing a gas and a gas-confinement member that engages or cooperates with the substrate holder to form aninner chamber within the outer chamber. The inner chamber has a smaller volume thanthe outer chamber, which not only facilitates depositions of more uniform thickness, butalso saves gas and speeds up the deposition process.

申请人：MICRON TECHNOLOGY, INC.

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