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专利名称：Magnetic bubble memory with single-level
bubble functional elements
发明人：Andrew H. Bobeck申请号：US05/914960申请日：19780612公开号：US04181979A公开日：19800101
摘要：Magnetic bubble functional elements are implemented by aperture patterns ina single layer of electrically-conducting material. The operations of the elements arecompatible with single-level conductor driven bubble memories described in A. H.Bobeck patent applications, Ser. Nos. 857,921 now U.S. Pat. No. 4,143,419 issued Mar. 6,1979 and 856,925, filed Dec. 6, 1977, and in A. H. Bobeck-F. J. Ciak patent application, Ser.No. 899,578, filed Apr. 24, 1978 now abandoned.
申请人：BELL TELEPHONE LABORATORIES INC
代理人：Herbert M. Shapiro
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