Strained silicon NMOS devices with embedded source

专利名称：Strained silicon NMOS devices with

embedded source/drain

发明人：Dureseti Chidambarrao,Effendi

Leobandung,Anda C. Mocuta,Haining S.Yang,Huilong Zhu

申请号：US10708746申请日：20040323公开号：US06881635B1公开日：20050419

专利附图：

摘要：A planar NFET on a strained silicon layer supported by a SiGe layer achieves

reduced external resistance by removing SiGe material outside the transistor body andbelow the strained silicon layer and replacing the removed material with epitaxial silicon,thereby providing lower resistance for the transistor electrodes and permitting bettercontrol over Arsenic diffusion.

申请人：Dureseti Chidambarrao,Effendi Leobandung,Anda C. Mocuta,Haining S.Yang,Huilong Zhu

地址：Weston CT US,Wappingers Falls NY US,LaGrangeville NY US,Wappingers FallsNY US,Poughkeepsie NY US

国籍：US,US,US,US,US

代理人：Todd M. C. Li

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