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专利名称：METHOD OF FORMING DIELECTRIC FILMS发明人：LEVY, Sagy,BLOOM, Robin, S.,KEPTEN, Dr.,
Avashai
申请号：EP01975332.6申请日：20010919公开号：EP1340247A1公开日：20030903
摘要：A kind of deposit high dielectric constant dielelectric coatings are provided tosubstrate (such as semiconductor wafer). In one embodiment, this method is related toforming nitride layer on substrate. In another embodiment, the present invention relatesto form metal oxide or silicate on semiconductor wafer (wafer). When forming metaloxide or silicate, passivation layer is located at first and is loaded into substrate.
申请人：Mattson Technology Inc.
地址：2800 Bayview Drive Fremont,California 94538 US
国籍：US
代理机构：Bergmeier, Werner, Dipl.-Ing.
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