Voltage booster circuit

专利名称：Voltage booster circuit发明人：Ernest A. Carter申请号：US06/148096申请日：19800509公开号：US04346310A公开日：19820824

摘要：An MOS voltage boost circuit includes a first field-effect- transistor coupledbetween ground and an output node and a second, depletion type, field effect transistorcoupled between the output node and a source of supply voltage (V.sub.DD). The firsttransistor is turned off by a disabling signal, and the second transistor is turned on by anenabling signal derived, in part, from the disabling signal. This produces a first voltage atthe output node. A third field-effect- transistor is capacitively coupled between theoutput node and the enabling signal to boost the output voltage when the enablingsignal terminates.

申请人：MOTOROLA, INC.

代理人：Anthony J. Sarli, Jr.,Vincent B. Ingrassia,Jeffrey Van Myers

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