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专利名称：FIN FIELD-EFFECT TRANSISTOR发明人：YONG LI申请号：US16402757申请日：20190503
公开号：US20190259671A1公开日：20190822
专利附图：
摘要：A fin field-effect transistor (fin-FET) includes a substrate having a plurality ofdiscrete fin structures thereon; a chemical oxide layer on at least a sidewall of a finstructure; a doped layer containing doping ions on the chemical oxide layer; and a dopedregion in the fin structure containing doping ions diffused from the doping ions in the
doped layer.
申请人：Semiconductor Manufacturing International (Shanghai)
Corporation,Semiconductor Manufacturing International (Beijing) Corporation
地址：Shanghai CN,Beijing CN
国籍：CN,CN
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