2N3741A资料

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-7813APPLICATIONS:• Drivers• Switches

• Medium-Power Amplifiers

2N3741AFEATURES:

• Low Saturation Voltage:

0.6 VCE(sat) @ IC = 1.0 Amp

• High Gain Characteristics:hFE @ IC = 250 mA: 30-100• Excellent Safe Area Limits

• Low Collector Cutoff Current:100 nA (Max) 2N3741A• Medium PowerPNP Transistors

DESCRIPTION:

These power transistors are produced by PPC's DOUBLEDIFFUSED PLANAR process. This technology produces highvoltage devices with excellent switching speeds, frequencyresponse, gain linearity, saturation voltages, high current gain,and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capabilityand inherent reliability of these devices. The temperature

range to 200°C permits reliable operation in high ambients, andthe hermetically sealed package insures maximum reliabilityand long life.

TO-66ABSOLUTE MAXIMUM RATINGS:

SYMBOL

VCEO*VEB*VCB*IC*IC*IB*TSTG*TJ*PD*

θ JCCHARACTERISTIC

Collector-Emitter VoltageEmitter-Base VoltageCollector-Base VoltagePeak Collector Current

Continuous Collector CurrentBase Current

Storage Temperature

Operating Junction TemperatureTotal Device DissipationTC = 25°C

Derate above 25°CThermal ImpedanceVALUE

807.080104.02.0-65 to 200-65 to 200

250.1437

UNITS

VdcVdcVdcAdcAdcAdc°C°CWattsW/°C°C/W* Indicates JEDEC registered data.

MSC1042.PDF 03-12-99

元器件交易网www.cecb2b.com

2N3741AELECTRICAL CHARACTERISTICS:

(25°Case Temperature Unless Otherwise Noted)

SYMBOLVCEO(sus)*

IEB0*ICEX*ICEO*ICBO*hFE*

CHARACTERISTICCollector-EmitterSustaining VoltageEmitter Base CutoffCurrent

Collector Cutoff CurrentCollector-Emitter CutoffCurrent

Collector Base CutoffCurrent

DC Current Gain(Note 1)

TEST CONDITIONS

IC = 100 mAdc, IB = 0 (Note 1)VEB = 7.0 Vdc

VCE = 80 Vdc, VBE(off) = 1.5 Vdc

VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°CVCE = 60 Vdc, IB = 0VCB = 80 Vdc, IE = 0

IC = 100 mAdc, VCE = 1.0 VdcIC = 250 mAdc, VCE = 1.0 VdcIC = 500 mAdc, VCE = 1.0 VdcIC = 1.0 Adc, VCE = 1.0 VdcIC = 1.0 Adc, IB = 125 mAdcIC = 250 mAdc, VCE = 1.0 Vdc

IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 MHzIC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHzVCB = 10 Vdc, IC = 0, f = 100 kHz

VALUEMin.Max.80------------------------40302010--------3.025----1001000.51.0100----100--------0.61.0--------100

UnitsVdcnAdcnAdcmAdc

µAdc

nAdc----------------VdcVdcMHz----pF

VCE(sat)*VBE*fT*hfe*Cob*

Collector-EmitterSaturation Voltage(Note 1)

Base-Emitter Voltage(Note 1)

Current Gain BandwidthProduct

Small-Signal CurrentGain

Common Base OutputCapacitance

Note 1:Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2.0%* Indicates JEDEC registered data.

MSC1042.PDF 03-12-99

元器件交易网www.cecb2b.com

2N3741APACKAGE MECHANICAL DATA:

R.145 [3.68] MAX.620 [15.75] MAX.050 [1.27].075 [1.91] .470 [11.94].500 [12.70].360 [9.14] MINSEATING PLANE.095 [2.41].105 [2.67].958 [24.33].962 [24.43]2 1.050 [1.27] MAX.250 [6.35].340 [8.64]R.350 [8.89] MAXNOTE: DIMENSIONS IN [ ] = MILLIMETERS.570 [14.48].590 [14.99].190 [4.83].210 [5.33].028 [0.71].034 [0.86].142 [3.61].152 [3.86] MSC1042.PDF 03-12-99