Method of Determining Electromigration (EM) Lifeti

专利名称：Method of Determining Electromigration

(EM) Lifetimes and Lifetime Criteria

发明人：Mankoo Lee,Tony P. Chiang,Dipankar

Pramanik

申请号：US13956220申请日：20130731

公开号：US20140109030A1公开日：20140417

专利附图：

摘要：Methods are described for performing detailed Technology Computer AidedDesign (TCAD) simulations of electromigration (EM) failure in a standard test structure

suitable for the simulation of integrated circuit (IC) conductive interconnects. Methodsare described for performing these simulation so as to extract from the results of thesesimulations criteria substantially underlying the EM lifetime of interconnects, therebypermitting rapid diagnosis of potential sites of EM failure early in the IC design andfabrication process, and thereby allowing more rapid development of reliable ICs robustagainst EM failure. Specific results for EM failure criteria in Cu interconnects are alsopresented.

申请人：Intermolecular, Inc.

地址：San Jose CA US

国籍：US

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