HIGH POWER MODULE

专利名称：HIGH POWER MODULE

发明人：CHIH-CHIANG WU,MING-TSAN PENG,SHIH-KAI HSIEH,LI-SONG LIN,CHENG-HANHO,YEU-JOU LIN

申请号：US16727139申请日：20191226

公开号：US20210202439A1公开日：20210701

专利附图：

摘要：A high power module is provided, which includes a substrate, plural first powerchips, plural second power chips, a positive electrode plate and a negative electrode plat.

The substrate includes a first metal area, a second metal area, a third metal areadisposed between the first metal area and the second metal area. The first power chipsare disposed on the third metal area and connected to the first metal area via plural firstconnection elements. The second power chips are disposed on the second metal areaand connected to the third metal area via plural second connection elements. Thepositive electrode plate is C-shaped and connected to the first metal area. The negativeelectrode plate is C-shaped and connected to the second metal area; the direction of theopening of the negative electrode plate is contrary to that of the opening of the positiveelectrode plate.

申请人：Industrial Technology Research Institute

地址：Hsin-chu TW

国籍：TW

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