SI9100DN02资料

Si9100

Vishay Siliconix

3-W High-Voltage Switchmode Regulator

FEATURES

D10- to 70-V Input RangeDCurrent-Mode Control

DOn-Chip 150-V, 5-W MOSFET Switch

DReference SelectionSi9100 − \"1%

DHigh Efficiency Operation (> 80%)

DInternal Start-Up CircuitDInternal Oscillator (1 MHz)DSHUTDOWN and RESETDESCRIPTION

The Si9100 high-voltage switchmode regulators aremonolithic BiC/DMOS integrated circuits which contain most ofthe components necessary to implement high-efficiencydc-to-dc converters up to 3 watts. They can either be operatedfrom a low-voltage dc supply, or directly from a 10- to 70-Vunregulated dc power source. The Si9100 may be used withan appropriate transformer to implement most single-endedisolated power converter topologies (i.e., flyback and forward),

or by using a level shift circuit can generate a +5-V or a −5-Vnon-isolated output from a −48-V source.

The Si9100 is available in both standard and lead (Pb)-free14-pin plastic DIP and 20-pin PLCC packages which arespecified to operate over the industrial temperature range of−40_C to 85_C.

FUNCTIONAL BLOCK DIAGRAM

FB14 (20)ErrorAmplifierVREF

10 (14)−+4 V (1%)RefGen2 V−++−1.2 VBIAS

1 (2)CurrentSourcesToInternalCircuitsC/L ComparatorCurrent-ModeComparatorCOMP

13 (18)DISCHARGE

9 (12)OSCIN8 (11)OSCOUT

7 (10)OSCClock (1/2 OSC)RQS3 (5)5 (8)DRAIN−VIN(BODY)4 (7)VCC11 (16)12 (17)VCC

6 (9)SOURCE+VIN

2 (3)8.8 V−+9.4 V−+Undervoltage ComparatorQSRSHUTDOWNRESETNote: Figures in parenthesis represent pin numbers for 20-pin package.

Applications information, see AN702 and AN713.Document Number: 70000S-42041—Rev. G, 15-Nov-04

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Si9100

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Voltages Referenced to −VIN (VCC < +VIN + 0.3 V)

VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V+VIN. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 VVDS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 VID (Peak) (Note: 300 ms pulse, 2% duty cycle). . . . . . . . . . . . . . . . . . . . 2.5 AID (rms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mALogic Inputs (RESET,

SHUTDOWN, OSC IN). . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to VCC + 0.3 VLinear Inputs (FEEDBACK, SOURCE). . . . . . . . . . . . . . . . . . . −0.3 V to 7 VHV Pre-Regulator Input Current (continuous). . . . . . . . . . . . . . . . . . . . . 3 mAStorage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 125_COperating Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 85_C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum ratingconditions for extended periods may affect device reliability.

Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_CPower Dissipation (Package)a

14-Pin Plastic DIP (J Suffix)b. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mW20-Pin PLCC (N Suffix)c. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400 mWThermal Impedance (QJA)

14-Pin Plastic DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167_C/W20-Pin PLCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90_C/WNotes

a.Device mounted with all leads soldered or welded to PC board.b.Derate 6 mW/_C above 25_Cc.Derate 11.2 mW/_C above 25_C

RECOMMENDED OPERATING RANGE

Voltages Referenced to −VIN

VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.5 V to 13.5 V+VIN. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 V to 70 VfOSC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 kHz to 1 MHz

ROSC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 kW to 1 MWLinear Inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 7 VDigital Inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to VCC

SPECIFICATIONSa

Test Conditions

UnlessOtherwise Specifiedp

Parameter

Reference

Output VoltageOutput ImpedanceeShort Circuit CurrentTemperature Stabilitye

VRZOUTISREFTREF

VREF = −VIN

OSC IN = − VIN (OSC Disabled), RL = 10 MW

RoomRoomRoomFull

3.921570

4.0301000.5

4.08451301.0

VkWmAmV/_C

Limits

Tempb

Minc

Typd

Maxc

Unit

Symbol

DISCHARGE = −VIN = 0 V

VCC = 10 V, +VIN = 48 VRBIAS = 390 kW, ROSC = 330 kW

Oscillator

Maximum FrequencyeInitial AccuracyVoltage StabilityTemperature Coefficiente

fMAXfOSCDf/fTOSC

ROSC = 0

ROSC = 330 kW, See Note fROSC = 150 kW, See Note fDf/f = f(13.5 V) − f, (9.5 V)/f(9.5 V)

RoomRoomRoomRoomFull

180160

310020010200

12024015500

MHzkHz%ppm/_C

Error Amplifier

Feedback Input VoltageInput BIAS CurrentInput OFFSET VoltageOpen Loop Voltage GaineUnity Gain BandwidtheDynamic Output ImpedanceeOutput CurrentPower Supply Rejectionwww.vishay.com

VFBIFBVOSAVOLBWZOUTIOUTPSRR

SOURCE (VFB = 3.4 V)SINK (VFB = 4.5 V)OSC IN = − VIN, (OSC Disabled)OSC IN = − VIN, (OSC Disabled) (OSC Disabled)FB Tied to COMP

OSC In = −VIN (OSC Disabled)OSC IN = −VIN, VFB = 4 V

RoomRoomRoomRoomRoomRoomRoomRoomRoom

0.1250603.96

4.0025\"158011000−2.00.1570

2000−1.44.04500\"40

VnAmVdBMHzWmAdB

2

Document Number: 70000S-42041—Rev. G, 15-Nov-04

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Si9100

Vishay Siliconix

SPECIFICATIONSa

Test Conditions

UnlessOtherwise Specified

Parameter

Current Limit

Threshold VoltageDelay to Outpute

VSOURCE

td

RL = 100 W from DRAIN to VCC

VFB = 0 VRL = 100 W from DRAIN to VCCVSOURCE = 1.5 V, See Figure 1

RoomRoom

1.0

1.2100

1.4200

Vns

Limits

Tempb

Minc

Typd

Maxc

Unit

Symbol

DISCHARGE = −VIN = 0 VVCC = 10 V, +VIN = 48 VRBIAS = 390 kW, ROSC = 330 kW

Pre-Regulator/Start-Up

Input Voltage

Input Leakage CurrentPre-Regulator Start-Up CurrentVCC Pre-Regulator

Turn-Off Threshold VoltageUndervoltage LockoutVREG −VUVLO

+VIN+IINISTARTVREGVUVLOVDELTA

IIN = 10 mAVCCw 10 VPulse Widthv300 ms

VCC = VUVLOIPRE-REGULATOR = 10 mARL = 100 W from DRAIN to VCC

See Detailed Description

RoomRoomRoomRoomRoomRoom

87.87.00.3

159.48.80.6

9.79.2

V

7010

VmAmA

Supply

Supply CurrentBias Current

ICCIBIAS

RoomRoom

0.4510

0.615

1.020

mAmA

Logic

SHUTDOWN DelayeSHUTDOWN Pulse WidtheRESET Pulse Widthe

Latching Pulse Widthe

SHUTDOWN and RESET LowInput Low VoltageInput High Voltage

Input Current, Input Voltage HighInput Current, Input Voltage Low

tSDtSWtRWtLWVILVIHIIHIIL

VIN = 10 VVIN = 0 VSee Figure 3

VSOURCE = −VIN, See Figure 2

RoomRoomRoomRoomRoomRoomRoomRoom

−358.0

1−25

5

505025

2.0

ns

50

100

V

mA

MOSFET Switch

Breakdown Voltage

Drain-Source On ResistancegDrain Off Leakage CurrentDrain Capacitance

V(BR)DSSrDS(on)IDSSCDS

VSOURCE = SHUTDOWN = 0 V IDRAIN = 100 mAVSOURCE = 0 V, IDRAIN = 100 mAVSOURCE = SHUTDOWN = 0 V VDRAIN = 100 VVSOURCE = SHUTDOWN = 0 V

FullRoomRoomRoom

35

150

1803

510

VWmApF

Notes

a.Refer to PROCESS OPTION FLOWCHART for additional information.b.Room = 25_C, Full = as determined by the operating temperature suffix.

c.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.d.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.e.Guaranteed by design, not subject to production test.f.CSTRAY Pin 8 = v 5 pF

g.Temperature coefficient of rDS(on) is 0.75% per _C, typical.

Document Number: 70000S-42041—Rev. G, 15-Nov-04

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Si9100

Vishay Siliconix

TIMING WAVEFORMS

SOURCE0VCC −DRAIN01.5 V −50%tdtr v 10 nsVCCSHUTDOWN0 −VCC −DRAIN050%tSDtf v 10 ns10%10%FIGURE 1.FIGURE 2.VCCSHUTDOWN0 −tSW50%tLW50%tr, tf v 10 nsVCCRESET0 −50%50%tRW50%FIGURE 3.

TYPICAL CHARACTERISTICS

140120100+VIN(V)80604020010

+VIN vs +IIN at Start-Up

VCC = −VINOutput Switching Frequencyvs. Oscillator Resistance

1 M

fOUT(Hz)15+IIN (mA)

20

100 k

10 k

10 k

100 k

rOSC − Oscillator Resistance (W)

1 M

FIGURE 4.FIGURE 5.

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Document Number: 70000S-42041—Rev. G, 15-Nov-04

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Si9100

Vishay Siliconix

PIN CONFIGURATIONS

PDIP-14

1234567

Top View

141312111098

PIN DESCRIPTION

Pin

Function

BIAS+VINDRAINSOURCE−VINVCCOSC OUTOSC INDISCHARGE

14-Pin DIP

12345671011121314

20-Pin PLCC*

23571011121416171820

PLCC-20

3212019456710111213Top View

1817161514VREFSHUTDOWNRESETCOMPFB

*Pins 1, 4, 6, 13, 15, and 19 = N/C

ORDERING INFORMATION

StandardPart Number

Si9100DJ02Si9100DN02

Lead (Pb)-FreePart Number

Si9100DJ02—E3Si9100DN02—E3

TemperatureRange

−40 to 85 _C

Package

PDIP-14PLCC-20

DETAILED DESCRIPTION

Pre-Regulator/Start-Up Section

Due to the low quiescent current requirement of the Si9100control circuitry, bias power can be supplied from theunregulated input power source, from an external regulatedlow-voltage supply, or from an auxiliary “bootstrap” winding onthe output inductor or transformer.

When power is first applied during start-up, +VIN will draw aconstant current. The magnitude of this current is determinedby a high-voltage depletion MOSFET device which isconnected between +VIN and VCC. This start-up circuitryprovides initial power to the IC by charging an external bypasscapacitance connected to the VCC pin. The constant current is

Document Number: 70000S-42041—Rev. G, 15-Nov-04

disabled when VCC exceeds 9.4 V. If VCC is not forced toexceed the 9.4-V threshold, then VCC will be regulated to anominal value of 9.4 V by the pre-regulator circuit.

As the supply voltage rises toward the normal operatingconditions, an internal undervoltage (UV) lockout circuit keepsthe output MOSFET disabled until VCC exceeds theundervoltage lockout threshold (typically 8.8 V). Thisguarantees that the control logic will be functioning properlyand that sufficient gate drive voltage is available before theMOSFET turns on. The design of the IC is such that theundervoltage lockout threshold will not exceed thepre-regulator turn-off voltage. Power dissipation can beminimized by providing an external power source to VCC suchthat the constant current source is always disabled.

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Si9100

Vishay Siliconix

DETAILED DESCRIPTION (CONT’D)

Note: During start-up or when VCC drops below 9.4V thestart-up circuit is capable of sourcing up to 20 mA. This maylead to a high level of power dissipation in the IC (for a 48-Vinput, approximately 1 W). Excessive start-up time caused byexternal loading of the VCC supply can result in devicedamage. Figure 4 gives the typical pre-regulator current atstart-up as a function of input voltage.

external resistor between the OSC IN and OSC OUT pins.(See Figure 5 for details of resistor value vs. frequency.) TheDISCHARGE pin should be tied to −VIN for normal internaloscillator operation. A frequency divider in the logic sectionlimits switch duty cycle to v 50% by locking the switchingfrequency to one half of the oscillator frequency.

Remote synchronization is accomplished by capacitivecoupling of a positive SYNC pulse into the OSC IN terminal.For a 5-V pulse amplitude and 0.5-ms pulse width, typicalvalues would be 100 pF in series with 3 kW to OSC IN.

BIAS

To properly set the bias for the Si9100, a 390-kW resistorshould be tied from BIAS to −VIN. This determines themagnitude of bias current in all of the analog sections and thepull-up current for the SHUTDOWN and RESET pins. Thecurrent flowing in the bias resistor is nominally 15mA.

SHUTDOWN and RESETSHUTDOWN and RESET are intended for overriding theoutput MOSFET switch via external control logic. The twoinputs are fed through a latch preceding the output switch.Depending on the logic state of RESET, SHUTDOWN can beeither a latched or unlatched input. The output is off wheneverSHUTDOWN is low. By simultaneously having SHUTDOWNand RESET low, the latch is set and SHUTDOWN has no effectuntil RESET goes high. The truth table for these inputs is givenin Table 1.

Both pins have internal current source pull-ups and should beleft disconnected when not in use. An added feature of thecurrent sources is the ability to connect a capacitor and anopen-collector driver to the SHUTDOWN or RESET pins toprovide variable shutdown time.Table 1.

Truth Table for the SHUTDOWN and RESETPins

RESETHReference Section

The reference section of the Si9100 consists of a temperaturecompensated buried zener and trimmable divider network.The output of the reference section is connected internally tothe non-inverting input of the error amplifier. Nominal referenceoutput voltage is 4 V. During the reference trimming procedurethe error amplifier is connected for unity gain in order tocompensate for the input offset voltage in the error amplifier.The output impedance of the reference section has beenpurposely made high so that a low impedance external voltagesource can be used to override the internal voltage source, ifdesired, without otherwise altering the performance of thedevice.

SHUTDOWNError Amplifier

Closed-loop regulation is provided by the error amplifier, whichis intended for use with “around-the-amplifier” compensation.A MOS differential input stage provides for low input leakagecurrent. The noninverting input to the error amplifier (VREF) isinternally connected to the output of the reference supply andshould be bypassed with a small capacitor to ground.

HHLLOutputNormal OperationNormal Operation (No Change)HLLOff (Not Latched)Off (Latched)Off (Latched, No Change)Output Switch

Oscillator Section

The oscillator consists of a ring of CMOS inverters, capacitors,and a capacitor discharge switch. Frequency is set by an

The output switch is a 5-W, 150-V lateral DMOS device. Likediscrete MOSFETs, the switch contains an intrinsic body-draindiode. However, the body contact in the Si9100 is connectedinternally to −VIN and is independent of the SOURCE.

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Document Number: 70000S-42041—Rev. G, 15-Nov-04

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Si9100

Vishay Siliconix

APPLICATIONS

GND

L1150 mH@ 0.2 ADCC5220 mF10 V1N58068R3150 kC120 mFC20.1 mF63C31 mFR43.3 k14CR1Q1MPSA93R73.9 kR810 k1%R910 k1%2C60.1 mF+5 V200 mA

713R105 kSi9100DJU1R5300 kC70.1mF10C80.1mF4R21 W1/ W2R610 kTL431CU2R1390 k159−48 V

FIGURE 6.Buck-Boost, Non-Isolated 1-W Supply

GND

C5220 mF10 VL1150 mH@ 0.2 ADCC31 mFR43.3 k14C70.1mF10C80.1mF4R21 W1/ W2R610 kR5300 kQ1MPSA93R73.9 kR105 kR810 k1%R910 k1%28R3150 kC120 mFC20.1mF1N5806CR13C60.1 mF−5 V200 mA

7Si9100DJ6U113R1390 k159TL431CU2−48 V

−5 V

FIGURE 7.Non-Isolated 1-W Supply (Buck)

Document Number: 70000S-42041—Rev. G, 15-Nov-04

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Si9100

Vishay Siliconix

+VINGND100 mH21N58193+5 V

20 mF150 mH0.1 mF220 mF

145GND

718 kW12390 kW345671 W2W141312240 kW0.022 mF861N5819−5 V

0.1 mF47 mFSi9100DJ1110980.1 mF12 kW1 mF1N41481/150 kW−VIN (−48 VDC)

FIGURE 8.1-W Flyback Converter for Telecommunications Power Supplies*

* For additional information on using the Si9100 in telecommunications and ISDN power supplies, see AN713 and AN702.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology andPackage Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, seehttp://www.vishay.com/ppg?70000.www.vishay.com

Document Number: 70000S-42041—Rev. G, 15-Nov-04

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