IRFR9120N资料

PD - 9.1507A

PRELIMINARY

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IRFR/U9120N

HEXFET® Power MOSFET

DUltra Low On-ResistanceP-Channel

Surface Mount (IRFR9120N)Straight Lead (IRFU9120N)Advanced Process TechnologyFast Switching

Fully Avalanche Rated

VDSS = -100VRDS(on) = 0.48ΩGSID = -6.6ADescription

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The D-Pak is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The straightlead version (IRFU series) is for through-hole mountingapplications. Power dissipation levels up to 1.5 watts arepossible in typical surface mount applications.

D-PakTO-252AA I-PakTO-251AAAbsolute Maximum Ratings

Parameter

ID @ TC = 25°CID @ TC = 100°CIDM

PD @TC = 25°CVGSEASIAREARdv/dtTJTSTG

Continuous Drain Current, VGS @ -10VContinuous Drain Current, VGS @ -10VPulsed Drain Current 󰂁Power DissipationLinear Derating FactorGate-to-Source Voltage

Single Pulse Avalanche Energy󰂂Avalanche Current󰂁

Repetitive Avalanche Energy󰂁Peak Diode Recovery dv/dt 󰂃Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

-6.6-4.2-200.32 ± 20100-6..0-5.0-55 to + 150300 (1.6mm from case )

Units

AWW/°CVmJAmJV/ns°C

Thermal Resistance

Parameter

RθJCRθJARθJA

Junction-to-Case

Junction-to-Ambient (PCB mount)**Junction-to-Ambient

Typ.

–––––––––

Max.

3.150110

Units

°C/W

3/16/98

元器件交易网www.cecb2b.com

IRFR/U9120N

元器件交易网www.cecb2b.com

IRFR/U9120N

元器件交易网www.cecb2b.com

IRFR/U9120N

元器件交易网www.cecb2b.com

IRFR/U9120N

元器件交易网www.cecb2b.com

IRFR/U9120N

元器件交易网www.cecb2b.com

IRFR/U9120N

元器件交易网www.cecb2b.com

IRFR/U9120N

元器件交易网www.cecb2b.com

IRFR/U9120N

元器件交易网www.cecb2b.com

IRFR/U9120N