SII100N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394\") Absolute Maximum RatingsSymbolConditionsIGBT Wechselrichter/ IGBT InverterVCESIC TC= 25(70)oCICRM TC= 70oC, tP =1msPtotTC= 25oC, Tvj= 150oCVGESDiode Wechselrichter/ Diode Inverter IF IFRM tP =1msoTC = 25oC, unless otherwise specifiedValues600130(100)200445_+201002001.252500UnitsVAAWVAAA sV2VR=0V, tP =10ms; TVj=125CI2tModule Isolation/ Module IsolationVISOLRMS, f=50Hz, t=1min, NTC connect to BaseplateSirectifierRSII100N06NPT IGBT ModulesCharacteristicsTC = 25oC, unless otherwise specifiedSymbolConditionsmin.typ.max.UnitsIGBT Wechselrichter/ IGBT InverterVGEthVGE = VCE, IC =1.5mA4.55.56.5VICESVGE = 0; VCE = 600V, Tj = 25(125)oC 1(1000)500uAIGESVCE=0; VGE=20V400nAVCE(sat)IC =100A; VGE = 15V; Tj = 25(125)oC1.95(2.2)2.45(-)VCiesunder following conditions4.3CresVGE = 0, VCE = 25V, f = 1MHz0.4nFLCE40nHIsc tP 10uS, VGE 15V, Tvj = 125 oC , Vcc = 360V 450Aunder following conditions:td(on)VCC = 300V, IC = 100A25(26)nstrRGon = RGoff =2.2 , , Tj = 25(125)oC10(11)nstd(off)VGE = ± 15V130(150)nstf20(30)nsEon(Eoff)Tj = 25(125)oC, LS = 15nH1.0(2.9)mJRCC'+EE'1.0mRthJC0.28K/WDiode Wechselrichter/ Diode Inverter VF under following conditionIF = 100A; VGE = 0V; Tj = 25(125)oC1.25(1.2)1.6(-)VIRMIF = 100A; Tj = 25(125)oC150(180)AQr-di/dt = 4400A/us7.7(13)uCErecVGE = -10V, VR=300V-(3.2)mJRthJC0.5RthCK0.03K/WTVJ-40...+125TVJM150oCTstg-40...+125Mechanical DataMsto heatsink M635NmMtto terminals M52.55Nmw160gSirectifierRSII100N06NPT IGBT ModulesSirectifierRSII100N06NPT IGBT ModulesSirectifierR
